CSD19533Q5A Datasheet دیتاشیت

CSD19533Q5A Datasheet

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نام دیتاشیت CSD19533Q5A Datasheet
حجم فایل 817.494 کیلوبایت
نوع فایل pdf
تعداد صفحات 14

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CSD19533Q5A 14 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD19533Q5A
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 3.2W;96W
  • Total Gate Charge (Qg@Vgs): 35nC@10V
  • Drain Source Voltage (Vdss): 100V
  • Input Capacitance (Ciss@Vds): 2670pF@50V
  • Continuous Drain Current (Id): 100A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9.4mΩ@10V,13A
  • Package: VSONP-8
  • Manufacturer: Texas Instruments
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Series: NexFET™
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Rds On (Max) @ Id, Vgs: 9.4mOhm @ 13A, 10V
  • Supplier Device Package: 8-VSONP (5x6)
  • Vgs (Max): ±20V
  • Mounting Type: Surface Mount
  • Technology: MOSFET (Metal Oxide)
  • Packaging: Cut Tape (CT)
  • Power Dissipation (Max): 3.2W (Ta), 96W (Tc)
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Vgs(th) (Max) @ Id: 3.4V @ 250µA
  • Base Part Number: CSD19533
  • FET Type: N-Channel
  • Package / Case: 8-PowerTDFN
  • Input Capacitance (Ciss) (Max) @ Vds: 2670pF @ 50V
  • Part Status: Active

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